MOSFET Characterization for Advanced Semiconductor Research – Universitas Indonesia – Nanoelectronic Lab

Background

The Nanoelectronic Laboratory at Universitas Indonesia required a high-precision MOSFET characterization solution to support its semiconductor research. Characterizing current-voltage (I-V) characteristics, gate leakage, and breakdown voltage are critical parameters for evaluating the performance and reliability of semiconductor devices. The primary challenge was performing ultra-low current and voltage measurements, which are beyond the capabilities of standard laboratory instruments.

Challenges

  • Measuring ultra-low currents and voltages with high accuracy.
  • Characterizing critical MOSFET parameters such as threshold voltage (Vth), subthreshold slope, and drain current (Id).
  • Evaluating MOSFET reliability through gate leakage and breakdown voltage measurements.
  • Optimizing semiconductor performance by analyzing carrier mobility and channel resistance.

Haliatech Solution

Haliatech provided a complete solution using the Tektronix 4200A-SCS Parameter Analyzer, equipped with 4200A-SMU (Source Measure Unit) modules and a Probe Station. This system is specifically designed for semiconductor parameter measurement with the highest precision and excellent repeatability.

Key Solution Features:

  • Capability to measure currents down to picoampere (pA) levels.
  • Integrated software for I-V, C-V, and pulsed IV analysis.
  • User-friendly interface for configuring complex measurements.
  • Support for a probe station for testing wafers and small-scale devices.

Products Used

  • Tektronix 4200A-SCS Parameter Analyzer
  • 4200A-SMU (Source Measure Unit)
  • Probe Station for micro and nano-device probing

Results Achieved

  • Accurate and reproducible MOSFET characterization.
  • High-confidence measurements of threshold voltage and gate leakage.
  • Optimization of semiconductor device designs for research and educational applications.
  • Enhanced laboratory capabilities in nanoelectronics research.

Benefits for Universitas Indonesia

  • Supports advanced research in nanoelectronics and semiconductors.
  • Strengthens the educational curriculum with industry-standard equipment.
  • Enhances research collaboration with domestic and international institutions.
  • Accelerates device characterization time with high accuracy.

Next Project

RF Component Characterization – Expanding research into characterizing high-frequency components for communication and RF design applications.

Need a Similar Solution?

Contact HaliaTech for a consultation and device demo:
📧 info@haliatech.com
🌐 www.haliatech.com

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