
Background
The Nanoelectronic Laboratory at Universitas Indonesia required a high-precision MOSFET characterization solution to support its semiconductor research. Characterizing current-voltage (I-V) characteristics, gate leakage, and breakdown voltage are critical parameters for evaluating the performance and reliability of semiconductor devices. The primary challenge was performing ultra-low current and voltage measurements, which are beyond the capabilities of standard laboratory instruments.
Challenges
- Measuring ultra-low currents and voltages with high accuracy.
- Characterizing critical MOSFET parameters such as threshold voltage (Vth), subthreshold slope, and drain current (Id).
- Evaluating MOSFET reliability through gate leakage and breakdown voltage measurements.
- Optimizing semiconductor performance by analyzing carrier mobility and channel resistance.

Haliatech Solution
Haliatech provided a complete solution using the Tektronix 4200A-SCS Parameter Analyzer, equipped with 4200A-SMU (Source Measure Unit) modules and a Probe Station. This system is specifically designed for semiconductor parameter measurement with the highest precision and excellent repeatability.
Key Solution Features:
- Capability to measure currents down to picoampere (pA) levels.
- Integrated software for I-V, C-V, and pulsed IV analysis.
- User-friendly interface for configuring complex measurements.
- Support for a probe station for testing wafers and small-scale devices.

Products Used
- Tektronix 4200A-SCS Parameter Analyzer

- 4200A-SMU (Source Measure Unit)

- Probe Station for micro and nano-device probing
Results Achieved
- Accurate and reproducible MOSFET characterization.
- High-confidence measurements of threshold voltage and gate leakage.
- Optimization of semiconductor device designs for research and educational applications.
- Enhanced laboratory capabilities in nanoelectronics research.
Benefits for Universitas Indonesia
- Supports advanced research in nanoelectronics and semiconductors.
- Strengthens the educational curriculum with industry-standard equipment.
- Enhances research collaboration with domestic and international institutions.
- Accelerates device characterization time with high accuracy.

Next Project
RF Component Characterization – Expanding research into characterizing high-frequency components for communication and RF design applications.
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